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EPC2021 N-Channel 80V 90A (Ta) Surface Mount Die
Price & Procurement
4,950 In Stock
Can ship immediately
 

Quantity
All prices are in MYR.
Price Break Unit Price Extended Price
1 29.34000 RM29.34
10 26.49100 RM264.91
25 25.26000 RM631.50
100 20.94670 RM2,094.67
500 18.48240 RM9,241.20

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : 917-1089-2-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 4,000 - Immediate
  • Unit Price: RM16.63416
  • Digi-Reel®  : 917-1089-6-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,950 - Immediate
  • Unit Price: Digi-Reel®

EPC2021

Datasheet
Digi-Key Part Number 917-1089-1-ND
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Manufacturer

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Manufacturer Part Number EPC2021
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Description GANFET TRANS 80V 90A BUMPED DIE
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 80V 90A (Ta) Surface Mount Die

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Customer Reference
Documents & Media
Datasheets EPC2021
Video File Texas Instruments/Wurth/EPC GaN Solutions First Look Video
Featured Product High Power eGaN® FETs
Reference Design Library EPC9019: 20A, 0 ~ 80V, Half H-Bridge
PCN Assembly/Origin Mult Dev Site Add 28/Aug/2020
Product Attributes
Type Description Select All
Categories
Manufacturer EPC
Series eGaN®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 40V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 917-1089-1