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BSZ160N10NS3GATMA1 N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
Price & Procurement
89,318 In Stock
Can ship immediately
 

Quantity
All prices are in MYR.
Price Break Unit Price Extended Price
1 5.50000 RM5.50
10 4.91600 RM49.16
25 4.66520 RM116.63
100 3.49860 RM349.86
500 2.96538 RM1,482.69
1,000 2.41560 RM2,415.60
2,500 2.38226 RM5,955.64

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : BSZ160N10NS3GATMA1TR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 85,000 - Immediate
  • Unit Price: RM2.16569

BSZ160N10NS3GATMA1

Datasheet
Digi-Key Part Number BSZ160N10NS3GATMA1CT-ND
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Manufacturer

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Manufacturer Part Number BSZ160N10NS3GATMA1
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Description MOSFET N-CH 100V 40A TSDSON-8
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8

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Customer Reference
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSZ160N10NS3 GINCT
BSZ160N10NS3 GINCT-ND
BSZ160N10NS3GATMA1CT