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IPB027N10N3GATMA1 N-Channel 100V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Price & Procurement
 

Quantity
All prices are in MYR.
Price Break Unit Price Extended Price
1 21.96000 RM21.96
10 19.72000 RM197.20
25 18.64240 RM466.06
100 14.91380 RM1,491.38
500 13.25662 RM6,628.31

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Alternate Package

IPB027N10N3GATMA1

Datasheet
Digi-Key Part Number IPB027N10N3GATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPB027N10N3GATMA1
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Description MOSFET N-CH 100V 120A TO263-3
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Detailed Description

N-Channel 100V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)

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Documents & Media
Datasheets IPB027N10N3 G
Featured Product Data Processing Systems
Other Related Documents Part Number Guide
Simulation Models MOSFET OptiMOS™ 100V N-Channel Spice Model
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
HTML Datasheet IPB027N10N3 G
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPB027N10N3 GCT
IPB027N10N3 GCT-ND
IPB027N10N3GATMA1CT