30 V and 40 V Automotive N-Channel MOSFETs

PANJIT N-channel power MOSFETs are designed with advanced split gate trench (SGT) technology to optimize fast switching and high power efficiency. Its low on-resistance in a compact die design delivers an excellent figure-of-merit (FOM), reducing both conduction and switching losses. The optimized trench structure supports rapid switching speeds while enhancing ruggedness, making it ideal for high-current, high-efficiency power applications. The MOSFET is offered in DFN3333-8L, DFN5060-8L, and DFN5060B-8L packages, AEC-Q101 qualified for automotive applications, compliant with green molding compound standards per IEC 61249, and lead-free in accordance with EU RoHS 2.0, supporting sustainable product design.