Diode 650 V 10A Through Hole PG-TO247-3
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Diode 650 V 10A Through Hole PG-TO247-3
PG-TO247-3

IDW10G65C5XKSA1

DigiKey Part Number
IDW10G65C5XKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IDW10G65C5XKSA1
Description
DIODE SIL CARB 650V 10A PGTO2473
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
Diode 650 V 10A Through Hole PG-TO247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™+
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
180 µA @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
IDW10G65
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In-Stock: 198
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Quantity
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM17.45000RM17.45
30RM9.67933RM290.38
120RM7.96108RM955.33
510RM6.70055RM3,417.28
1,020RM6.24038RM6,365.19
2,010RM6.13458RM12,330.51
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM17.45000
Unit Price with VAT:RM19.19500