Name: IGT65R140D2ATMA1
Brand: Infineon Technologies
SKU: 448-IGT65R140D2ATMA1TR-ND
Price: 18.073 MYR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IGT65R140D2ATMA1
DigiKey Part Number	448-IGT65R140D2ATMA1TR-ND - Tape & Reel (TR) 448-IGT65R140D2ATMA1CT-ND - Cut Tape (CT) 448-IGT65R140D2ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGT65R140D2ATMA1
Description	GANFET N-CH 650V 13A 8PSFN
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 13A (Tc) 47W (Tc) Surface Mount PG-HSOF-8-3
Datasheet	Datasheet
EDA/CAD Models	IGT65R140D2ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolGaN™ G5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	170mOhm @ 3.1A
Vgs(th) (Max) @ Id	1.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.8 nC @ 3 V
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN