Name: IMBG65R107M1HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG65R107M1HXTMA1TR-ND
Price: 34.804 MYR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMBG65R107M1HXTMA1
DigiKey Part Number	448-IMBG65R107M1HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG65R107M1HXTMA1CT-ND - Cut Tape (CT) 448-IMBG65R107M1HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG65R107M1HXTMA1
Description	SILICON CARBIDE MOSFET PG-TO263-
Customer Reference
Detailed Description	N-Channel 650 V 24A (Tc) 110W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet
EDA/CAD Models	IMBG65R107M1HXTMA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 2.6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 15 nC @ 18 V
Series CoolSIC™ M1	Vgs (Max) +23V, -5V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 496 pF @ 400 V
Part Status Not For New Designs	Power Dissipation (Max) 110W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO263-7-12
Current - Continuous Drain (Id) @ 25°C 24A (Tc)	Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drive Voltage (Max Rds On, Min Rds On) 18V	Base Product Number IMBG65R
Rds On (Max) @ Id, Vgs 141mOhm @ 8.9A, 18V