Name: IMT65R060M2HXUMA1
Brand: Infineon Technologies
SKU: 448-IMT65R060M2HXUMA1TR-ND
Price: 29.205 MYR
Availability: InStock

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IMT65R060M2HXUMA1
DigiKey Part Number	448-IMT65R060M2HXUMA1TR-ND - Tape & Reel (TR) 448-IMT65R060M2HXUMA1CT-ND - Cut Tape (CT) 448-IMT65R060M2HXUMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMT65R060M2HXUMA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 41.4A (Tc) 208W (Tc) Surface Mount PG-HSOF-8-2
Datasheet	Datasheet
EDA/CAD Models	IMT65R060M2HXUMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	41.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	55mOhm @ 15.4A, 20V
Vgs(th) (Max) @ Id	5.6V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	669 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-2
Package / Case	8-PowerSFN