N-Channel 200 V 6.8A (Ta), 39A (Tc) 3.8W (Ta), 125W (Tc) Through Hole PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPP339N20NM6AKSA1

DigiKey Part Number
448-IPP339N20NM6AKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP339N20NM6AKSA1
Description
MOSFET
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 6.8A (Ta), 39A (Tc) 3.8W (Ta), 125W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
OptiMOS™ 6
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 15V
Rds On (Max) @ Id, Vgs
31.8mOhm @ 26A, 15V
Vgs(th) (Max) @ Id
4.5V @ 52µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 562
Check for Additional Incoming Stock
Quantity
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM11.47000RM11.47
50RM5.68460RM284.23
100RM5.12320RM512.32
500RM4.13842RM2,069.21
1,000RM3.82200RM3,822.00
2,000RM3.55591RM7,111.82
5,000RM3.46277RM17,313.85
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM11.47000
Unit Price with VAT:RM12.61700