N-Channel 600 V 30A (Tc) 219W (Tc) Through Hole PG-TO220-3
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IPP60R125C6XKSA1

DigiKey Part Number
IPP60R125C6XKSA1-ND
Manufacturer
Manufacturer Product Number
IPP60R125C6XKSA1
Description
MOSFET N-CH 600V 30A TO220-3
Customer Reference
Detailed Description
N-Channel 600 V 30A (Tc) 219W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R125C6XKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.5V @ 960µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2127 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
219W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
125mOhm @ 14.5A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (8)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STP45N60DM2AGSTMicroelectronics0497-16128-5-NDRM27.03000Direct
AOT42S60LAlpha & Omega Semiconductor Inc.3,045785-1515-5-NDRM30.89000Similar
R6035VNX3C16Rohm Semiconductor953846-R6035VNX3C16-NDRM29.51000Similar
SIHP30N60E-E3Vishay Siliconix0742-SIHP30N60E-E3-NDRM13.04534Similar
STP26NM60NSTMicroelectronics180497-9064-5-NDRM31.87000Similar
In-Stock: 404
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Not recommended for new design, minimums may apply View Substitutes
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM22.58000RM22.58
50RM11.79400RM589.70
100RM10.75300RM1,075.30
500RM8.92994RM4,464.97
1,000RM8.34468RM8,344.68
2,000RM7.90414RM15,808.28
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM22.58000
Unit Price with VAT:RM24.83800