Name: IXSJ25N120R1
Brand: IXYS
SKU: 238-IXSJ25N120R1-ND
Price: 70.169 MYR
Availability: InStock

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IXSJ25N120R1
DigiKey Part Number	238-IXSJ25N120R1-ND
Manufacturer	IXYS
Manufacturer Product Number	IXSJ25N120R1
Description	1200V 62M (25A @ 25C) SIC MOSFET
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 28A (Tc) 75.3W (Tc) Through Hole ISO247-3L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.8V @ 5.3mA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 52 nC @ 18 V
Packaging Tube	Vgs (Max) +21V, -4V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1435 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 75.3W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 28A (Tc)	Supplier Device Package ISO247-3L
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-3
Rds On (Max) @ Id, Vgs 81mOhm @ 12A, 18V

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Unit Price without VAT:	RM63.79000
Unit Price with VAT:	RM70.16900

IXSJ25N120R1