TO-220
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTP4N65X2

DigiKey Part Number
238-IXTP4N65X2-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTP4N65X2
Description
MOSFET N-CH 650V 4A TO220
Manufacturer Standard Lead Time
41 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 4A (Tc) 80W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Ultra X2
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
455 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
IXTP4
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In-Stock: 193
Factory Stock: 2,950
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Quantity
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM14.96000RM14.96
50RM7.54800RM377.40
100RM6.82800RM682.80
500RM5.56612RM2,783.06
1,000RM5.16069RM5,160.69
2,000RM4.86185RM9,723.70
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM14.96000
Unit Price with VAT:RM16.45600