PBRN113ES,126 is Obsolete and no longer manufactured.
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PBRN113ET,215
Nexperia USA Inc.
In Stock: 4,635
Unit Price: RM1.14000
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3
TO-92-3

PBRN113ES,126

DigiKey Part Number
PBRN113ES,126-ND - Tape & Box (TB)
Manufacturer
NXP USA Inc.
Manufacturer Product Number
PBRN113ES,126
Description
TRANS PREBIAS NPN 40V TO92-3
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
NXP USA Inc.
Series
-
Packaging
Tape & Box (TB)
Part Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Resistors Included
R1 and R2
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic
1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)
500nA
Power - Max
700 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PBRN113
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Obsolete
This product is no longer manufactured. View Substitutes