Bipolar (BJT) Transistor NPN 80 V 1.5 A 12.5 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD139G

DigiKey Part Number
BD139GOS-ND
Manufacturer
Manufacturer Product Number
BD139G
Description
TRANS NPN 80V 1.5A TO-126
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 1.5 A 12.5 W Through Hole TO-126
Datasheet
 Datasheet
EDA/CAD Models
BD139G Models
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
Current - Collector Cutoff (Max)
100nA (ICBO)
Mfr
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Packaging
Bulk
Power - Max
12.5 W
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
1.5 A
Package / Case
TO-225AA, TO-126-3
Voltage - Collector Emitter Breakdown (Max)
80 V
Supplier Device Package
TO-126
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 4,517
Check for Additional Incoming Stock
All prices are in MYR
Bulk
QuantityUnit PriceExt Price
1RM5.48000RM5.48
10RM3.46300RM34.63
100RM2.29540RM229.54
500RM1.79420RM897.10
1,000RM1.63281RM1,632.81
2,000RM1.49708RM2,994.16
5,000RM1.35017RM6,750.85
10,000RM1.25941RM12,594.10
Manufacturers Standard Package
Unit Price without VAT:RM5.48000
Unit Price with VAT:RM6.02800