2SK1808-E is Obsolete and no longer manufactured.
Available Substitutes:

MFR Recommended


Toshiba Semiconductor and Storage
In Stock: 52
Unit Price: RM8.94000
Datasheet
Image for 2SK1808-E is not available
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SK1808-E

DigiKey Part Number
559-2SK1808-E-ND
Manufacturer
Manufacturer Product Number
2SK1808-E
Description
NCH POWER MOSFET 900V 4A 4000MOH
Customer Reference
Detailed Description
N-Channel 900 V 4A (Ta) 35W (Tc) Through Hole TO-220FM
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tray
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
Base Product Number
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Obsolete
This product is no longer manufactured. View Substitutes