TP65H035G4WSQA Renesas Electronics Corporation | Single FETs, MOSFETs

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TP65H035G4WSQA
DigiKey Part Number	1707-TP65H035G4WSQA-ND
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	TP65H035G4WSQA
Description	650 V 46.5 GAN FET
Customer Reference
Detailed Description	N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mfr Renesas Electronics Corporation	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
Part Status Obsolete	Power Dissipation (Max) 187W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology GaNFET (Gallium Nitride)	Grade Automotive
Drain to Source Voltage (Vdss) 650 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 10V	Supplier Device Package TO-247-3
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V	Package / Case TO-247-3
Vgs(th) (Max) @ Id 4.8V @ 1mA

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Tube

Quantity	Unit Price	Ext Price
1	RM84.83000	RM84.83

Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	RM84.83000
Unit Price with VAT:	RM93.31300

TP65H035G4WSQA