N-Channel 650 V 16A (Tc) 83W (Tc) Through Hole TO-220AB
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TP65H150G4PS

DigiKey Part Number
1707-TP65H150G4PS-ND
Manufacturer
Manufacturer Product Number
TP65H150G4PS
Description
GAN FET N-CH 650V TO-220
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 16A (Tc) 83W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
598 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
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In-Stock: 1,363
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All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM18.09000RM18.09
50RM9.31560RM465.78
100RM8.46760RM846.76
500RM6.98250RM3,491.25
1,000RM6.50557RM6,505.57
2,000RM6.41875RM12,837.50
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM18.09000
Unit Price with VAT:RM19.89900