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Mosfet Array 1200V (1.2kV) 70A (Tc) 385W (Tc) Through Hole 20-HSDIP
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BST70B2P4K01-VC

DigiKey Part Number
846-BST70B2P4K01-VC-ND
Manufacturer
Manufacturer Product Number
BST70B2P4K01-VC
Description
HSDIP20, 1200V, 70A, FULL-BRIDGE
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 70A (Tc) 385W (Tc) Through Hole 20-HSDIP
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
Rohm Semiconductor
Series
-
Packaging
Box
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Full Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 70A, 18V
Vgs(th) (Max) @ Id
4.8V @ 22.2mA
Gate Charge (Qg) (Max) @ Vgs
170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
4500pF @ 800V
Power - Max
385W (Tc)
Operating Temperature
-40°C ~ 175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
20-PowerDIP Module (1.508", 38.30mm)
Supplier Device Package
20-HSDIP
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In-Stock: 4
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All prices are in MYR
Box
QuantityUnit PriceExt Price
1RM435.92000RM435.92
10RM366.03100RM3,660.31
60RM335.62100RM20,137.26
120RM327.39575RM39,287.49
Manufacturers Standard Package
Unit Price without VAT:RM435.92000
Unit Price with VAT:RM479.51200