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Parametric Equivalent


Toshiba Semiconductor and Storage
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Datasheet

Parametric Equivalent


Toshiba Semiconductor and Storage
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Datasheet
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SA1943-O(S1,F

DigiKey Part Number
264-2SA1943-O(S1F-ND
Manufacturer
Manufacturer Product Number
2SA1943-O(S1,F
Description
TRANS PNP 230V 15A TO-3P
Manufacturer Standard Lead Time
14 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
Transistor Type
Current - Collector (Ic) (Max)
15 A
Voltage - Collector Emitter Breakdown (Max)
230 V
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 5V
Power - Max
150 W
Frequency - Transition
30MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PL
Supplier Device Package
TO-3P(L)
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All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM16.43000RM16.43
25RM9.34880RM233.72
100RM7.65070RM765.07
500RM6.29132RM3,145.66
1,000RM5.89030RM5,890.30
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM16.43000
Unit Price with VAT:RM18.07300