Name: RN1106MFV,L3F
Brand: Toshiba Semiconductor and Storage
SKU: RN1106MFVL3FTR-ND
Price: 0.693 MYR
Availability: InStock

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RN1106MFV,L3F
DigiKey Part Number	RN1106MFVL3FTR-ND - Tape & Reel (TR) RN1106MFVL3FCT-ND - Cut Tape (CT) RN1106MFVL3FDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN1106MFV,L3F
Description	TRANS PREBIAS NPN 50V 0.1A VESM
Manufacturer Standard Lead Time	42 Weeks
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Datasheet	Datasheet
EDA/CAD Models	RN1106MFV,L3F Models

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Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors	Resistor - Emitter Base (R2) 47 kOhms
Manufacturer Toshiba Semiconductor and Storage	DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Part Status Active	Current - Collector Cutoff (Max) 500nA
Transistor Type NPN - Pre-Biased	Power - Max 150 mW
Current - Collector (Ic) (Max) 100 mA	Mounting Type Surface Mount
Voltage - Collector Emitter Breakdown (Max) 50 V	Package / Case SOT-723
Resistors Included R1 and R2	Supplier Device Package VESM
Resistor - Base (R1) 4.7 kOhms	Base Product Number RN1106