N-Channel 650 V 8A (Ta) 45W (Tc) Through Hole TO-220SIS
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TK8A65D(STA4,Q,M)

DigiKey Part Number
TK8A65D(STA4QM)-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK8A65D(STA4,Q,M)
Description
MOSFET N-CH 650V 8A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 8A (Ta) 45W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
EDA/CAD Models
TK8A65D(STA4,Q,M) Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
840mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK8A65
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In-Stock: 17
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Quantity
All prices are in MYR
Bulk
QuantityUnit PriceExt Price
1RM11.94000RM11.94
50RM5.95020RM297.51
100RM5.36980RM536.98
500RM4.35158RM2,175.79
1,000RM4.02436RM4,024.36
2,000RM3.81195RM7,623.90
Manufacturers Standard Package
Unit Price without VAT:RM11.94000
Unit Price with VAT:RM13.13400