Name: TK9A60D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK9A60D(STA4QM)-ND
Price: 12.375 MYR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK9A60D(STA4,Q,M)
DigiKey Part Number	TK9A60D(STA4QM)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK9A60D(STA4,Q,M)
Description	MOSFET N-CH 600V 9A TO220SIS
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 9A (Ta) 45W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK9A60D(STA4,Q,M) Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	830mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK9A60

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Tube