TPN2R503NC,L1Q Toshiba Semiconductor and Storage | Single FETs, MOSFETs

TPN2R503NC,L1Q is Obsolete and no longer manufactured.

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Toshiba Semiconductor and Storage

In Stock: 4,886

Unit Price: RM6.90000

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In Stock: 4,868

Unit Price: RM5.83000

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TPN2R503NC,L1Q
DigiKey Part Number	TPN2R503NCL1QTR-ND - Tape & Reel (TR)
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN2R503NC,L1Q
Description	MOSFET N CH 30V 40A 8TSON-ADV
Customer Reference
Detailed Description	N-Channel 30 V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2230 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 35W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	TPN2R503