TRS6E65C,S1Q
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TRS10E65H,S1Q

DigiKey Part Number
264-TRS10E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS10E65H,S1Q
Description
DIODE SIL CARB 650V 10A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 10A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 650 V
Capacitance @ Vr, F
649pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 100
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Quantity
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM17.95000RM17.95
50RM9.43820RM471.91
100RM8.98820RM898.82
500RM7.41946RM3,709.73
1,000RM7.06288RM7,062.88
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM17.95000
Unit Price with VAT:RM19.74500