Name: TW107Z65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW107Z65C,S1F-ND
Price: 35.453 MYR
Availability: InStock

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TW107Z65C,S1F
cms-digikey-product-number	264-TW107Z65C,S1F-ND
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	TW107Z65C,S1F
cms-description	G3 650V SIC-MOSFET TO-247-4L 10
cms-standard-lead-time	24 Weeks
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cms-detailed-description	N-Channel 650 V 20A (Tc) 76W (Tc) Through Hole TO-247-4L(X)
Datasheet	Datasheet

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cms-category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 1.2mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Packaging Tube	Vgs (Max) +25V, -10V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 76W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 20A (Tc)	Supplier Device Package TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 152mOhm @ 10A, 18V

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In-Stock: 5

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Tube

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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	RM32.23000
Unit Price with VAT:	RM35.45300

TW107Z65C,S1F