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IRF640PBF | |
|---|---|
DigiKey Part Number | IRF640PBF-ND |
Manufacturer | |
Manufacturer Product Number | IRF640PBF |
Description | MOSFET N-CH 200V 18A TO220AB |
Manufacturer Standard Lead Time | 28 Weeks |
Customer Reference | |
Detailed Description | N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB |
Datasheet | Datasheet |
EDA/CAD Models | IRF640PBF Models |
Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V |
Packaging Tube | Vgs (Max) ±20V |
Part Status Active | Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V |
FET Type | Power Dissipation (Max) 125W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 200 V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-220AB |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V | Base Product Number |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IRF640PBF-BE3 | Vishay Siliconix | 74 | 742-IRF640PBF-BE3-ND | RM347.58000 | Direct |
| FDP18N20F | onsemi | 0 | FDP18N20F-ND | RM0.00000 | Similar |
| FQP19N20 | onsemi | 0 | FQP19N20FS-ND | RM73.90675 | Similar |
| FQP19N20C | onsemi | 0 | FQP19N20C-ND | RM65.84709 | Similar |
| IRF200B211 | Infineon Technologies | 108 | IRF200B211-ND | RM207.80000 | Similar |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | RM14.70000 | RM14.70 |
| 50 | RM7.39460 | RM369.73 |
| 100 | RM6.68660 | RM668.66 |
| 500 | RM5.44594 | RM2,722.97 |
| 1,000 | RM5.04738 | RM5,047.38 |
| 2,000 | RM4.71232 | RM9,424.64 |
| 5,000 | RM4.42758 | RM22,137.90 |
| Unit Price without VAT: | RM14.70000 |
|---|---|
| Unit Price with VAT: | RM16.17000 |















