Name: SI4190BDY-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SI4190BDY-T1-GE3TR-ND
Price: 12.573 MYR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI4190BDY-T1-GE3
DigiKey Part Number	742-SI4190BDY-T1-GE3TR-ND - Tape & Reel (TR) 742-SI4190BDY-T1-GE3CT-ND - Cut Tape (CT) 742-SI4190BDY-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4190BDY-T1-GE3
Description	N-CHANNEL 100 V (D-S) MOSFET SO-
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 12A (Ta), 17A (Tc) 3.8W (Ta), 8.4W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet
EDA/CAD Models	SI4190BDY-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 8.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Base Product Number	SI4190