Name: SIHB12N50E-GE3
Brand: Vishay Siliconix
SKU: SIHB12N50E-GE3-ND
Price: 13.475 MYR
Availability: OutOfStock

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHB12N50E-GE3
DigiKey Part Number	SIHB12N50E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB12N50E-GE3
Description	MOSFET N-CH 500V 10.5A D2PAK
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 500 V 10.5A (Tc) 114W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	886 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SIHB12

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