Name: SIHD6N65E-GE3
Brand: Vishay Siliconix
SKU: SIHD6N65E-GE3-ND
Price: 10.835 MYR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHD6N65E-GE3
DigiKey Part Number	SIHD6N65E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHD6N65E-GE3
Description	MOSFET N-CH 650V 7A DPAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 7A (Tc) 78W (Tc) Surface Mount TO-252AA
Datasheet	Datasheet
EDA/CAD Models	SIHD6N65E-GE3 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Packaging Tube	Vgs (Max) ±30V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 100 V
FET Type N-Channel	Power Dissipation (Max) 78W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 7A (Tc)	Supplier Device Package TO-252AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V	Base Product Number SIHD6

Report Product Information Error

Documents & Media

Environmental & Export Classifications

Additional Resources

In-Stock: 2,780

Check for Additional Incoming Stock

Quantity

All prices are in MYR

Tube

Manufacturers Standard Package

Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	RM9.85000
Unit Price with VAT:	RM10.83500

SIHD6N65E-GE3