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N-Channel 600 V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N60E-GE3

DigiKey Part Number
SIHP12N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP12N60E-GE3
Description
MOSFET N-CH 600V 12A TO220AB
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N60E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
Product Questions and Answers

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All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM13.40000RM13.40
50RM6.73260RM336.63
100RM6.08530RM608.53
500RM4.95062RM2,475.31
1,000RM4.58612RM4,586.12
2,000RM4.28475RM8,569.50
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM13.40000
Unit Price with VAT:RM14.74000