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N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N65E-GE3

DigiKey Part Number
SIHP12N65E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHP12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N65E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP12
Product Questions and Answers

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Quantity
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM12.25000RM12.25
10RM7.94000RM79.40
100RM5.49760RM549.76
500RM4.45346RM2,226.73
1,000RM4.11795RM4,117.95
2,000RM3.83587RM7,671.74
5,000RM3.77719RM18,885.95
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM12.25000
Unit Price with VAT:RM13.47500