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IDW12G65C5FKSA1
Infineon Technologies
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Diode 650 V 12A Through Hole PG-TO247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Diode 650 V 12A Through Hole PG-TO247-3
PG-TO247-3

IDW12G65C5XKSA1

DigiKey Part Number
IDW12G65C5XKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IDW12G65C5XKSA1
Description
DIODE SIL CARB 650V 12A PGTO2473
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
Diode 650 V 12A Through Hole PG-TO247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Infineon Technologies
Series
CoolSiC™+
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
190 µA @ 650 V
Capacitance @ Vr, F
360pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
IDW12G65
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Quantity
All prices are in MYR
Tube
QuantityUnit PriceExt Price
1RM19.90000RM19.90
30RM11.12933RM333.88
120RM9.19892RM1,103.87
510RM7.78304RM3,969.35
1,020RM7.30576RM7,451.88
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:RM19.90000
Unit Price with VAT:RM21.89000