Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126
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BD681G

DigiKey Part Number
BD681GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
BD681G
Description
TRANS NPN DARL 100V 4A TO-126
Manufacturer Standard Lead Time
21 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
BD681
Product Questions and Answers

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In-Stock: 5,862
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Quantity
All prices are in MYR
Bulk
QuantityUnit PriceExt Price
1RM6.54000RM6.54
10RM4.15700RM41.57
100RM2.78120RM278.12
500RM2.19096RM1,095.48
1,000RM2.00097RM2,000.97
2,000RM1.84114RM3,682.28
5,000RM1.66826RM8,341.30
10,000RM1.60555RM16,055.50
Manufacturers Standard Package
Unit Price without VAT:RM6.54000
Unit Price with VAT:RM7.19400
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