Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
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BD682G

DigiKey Part Number
BD682GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
BD682G
Description
TRANS PNP DARL 100V 4A TO-126
Manufacturer Standard Lead Time
8 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 100 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
EDA/CAD Models
BD682G Models
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Bulk
Part Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
BD682
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In-Stock: 433
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Quantity
All prices are in MYR
Bulk
QuantityUnit PriceExt Price
1RM6.07000RM6.07
10RM3.84200RM38.42
100RM2.55980RM255.98
500RM2.00948RM1,004.74
1,000RM1.83242RM1,832.42
2,000RM1.68349RM3,366.98
5,000RM1.52233RM7,611.65
10,000RM1.44401RM14,440.10
Manufacturers Standard Package
Unit Price without VAT:RM6.07000
Unit Price with VAT:RM6.67700
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