Power Driver Modules

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Type	Configuration	Current	Voltage	Voltage - Isolation	Grade	Qualification	Mounting Type	Package / Case
IGCM15F60GAXKMA1 IGBT 600V 24MDIP Infineon Technologies	276 In Stock	1 : RM53.07000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	15 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
FPDB40PH60B MODULE SPM 600V 40A SPMGC onsemi	133 In Stock	1 : RM89.31000 Tube	PFC SPM® 3	Tube	Not For New Designs	IGBT	2 Phase	40 A	600 V	2500Vrms	-	-	Through Hole	27-PowerDIP Module (1.205", 30.60mm)
FSBB20CH60C MODULE SPM 600V 20A 27PWRDIP onsemi	307 In Stock	1 : RM100.21000 Tube	Motion SPM® 3	Tube	Not For New Designs	IGBT	3 Phase	20 A	600 V	2500Vrms	-	-	Through Hole	27-PowerDIP Module (1.205", 30.60mm)
FSBB30CH60C MODULE SPM 600KV 30A 27PWRDIP onsemi	161 In Stock	1 : RM113.72000 Tube	Motion SPM® 3	Tube	Not For New Designs	IGBT	3 Phase	30 A	600 V	2500Vrms	-	-	Through Hole	27-PowerDIP Module (1.205", 30.60mm)
LMG3522R030RQSR 650-V 30-M GAN FET WITH INTEGRAT Texas Instruments	1,552 In Stock	1 : RM114.91000 Cut Tape (CT) 2,000 : RM54.26750 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	Half Bridge Inverter	55 A	650 V	-	-	-	Surface Mount	52-VQFN Exposed Pad
FNB34060T PWR DRVR MOD 600V 40A 27PWRDIP onsemi	110 In Stock 240 Factory	1 : RM125.32000 Tube	Motion SPM® 3	Tube	Active	IGBT	3 Phase Inverter	40 A	600 V	2500Vrms	-	-	Through Hole	27-PowerDIP Module (1.205", 30.60mm)
LMG3522R030QRQSTQ1 AUTOMOTIVE 650-V 30-M GAN FET WI Texas Instruments	240 In Stock	1 : RM157.89000 Cut Tape (CT) 250 : RM108.92784 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	Half Bridge Inverter	55 A	650 V	-	Automotive	AEC-Q100	Surface Mount, Wettable Flank	52-VQFN Exposed Pad
2SP0430T2A0C-FF1800R17IP5 SCALE-2 PNP DUAL GATE DRVR 1.7KV Power Integrations	558 In Stock	1 : RM947.93000 Tray	SCALE™-2	Tray	Active	IGBT	3 Phase Inverter	1800 A	1.7 kV	5000Vrms	-	-	-	Module
FBS-GAM02-P-C50 50V 10A HALF BRIDGE EPC Space, LLC	35 In Stock	1 : RM2,923.80000 Bulk	-	Bulk	Active	MOSFET	3 Phase	10 A	50 V	-	-	-	Surface Mount	18-SMD Module
IM828XCCXKMA1 CIPOS MAXI 1200V 35A PG-MDIP-24 Infineon Technologies	197 In Stock	Active	CIPOS™	Tube	Active	IGBT	3 Phase Inverter	35 A	1.2 kV	2500Vrms	-	-	Through Hole	24-PowerDIP Module (1.094", 27.80mm)
AOZ5507QI_2 25V/30A 5X5 DRMOS POWER MODULE Alpha & Omega Semiconductor Inc.	8,700 In Stock	1 : RM11.43000 Cut Tape (CT) 5,000 : RM3.29481 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	1 Phase	30 A	-	-	-	-	Surface Mount	22-PowerVFQFN Module
FDMF5062 SMART POWER STAGE 70A 39PQFN onsemi	2,069 In Stock	1 : RM22.37000 Cut Tape (CT) 3,000 : RM8.22319 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	1 Phase	70 A	30 V	-	-	-	Surface Mount	39-PowerVFQFN
NV6128 GANFAST SINGLE, 650V, 70MOHMS, P Navitas Semiconductor, Inc.	3,579 In Stock	1 : RM45.10000 Cut Tape (CT) 5,000 : RM20.78667 Tape & Reel (TR)	GaNFast™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	Half Bridge	20 A	650 V	-	-	-	Surface Mount	30-PowerVQFN
NV6117 IC PWR GANFAST N-CH 1:1 8QFN Navitas Semiconductor, Inc.	2,016 In Stock	1 : RM29.15000 Cut Tape (CT) 5,000 : RM13.60564 Tape & Reel (TR)	GaNFast™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	Half Bridge	12 A	650 V	-	-	-	Surface Mount	8-PowerVDFN
NV6117-RA IC PWR GANFAST N-CH 1:1 8QFN Navitas Semiconductor, Inc.	3,002 In Stock	1 : RM32.96000 Cut Tape (CT) 1,000 : RM13.60564 Tape & Reel (TR)	GaNFast™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET	Half Bridge	12 A	650 V	-	-	-	Surface Mount	8-PowerVDFN
IKCM15H60GAXKMA2 IFPS MODULES 24MDIP Infineon Technologies	588 In Stock	1 : RM39.07000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	15 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
IGCM06F60GAXKMA1 IGBT 600V 24MDIP Infineon Technologies	260 In Stock	1 : RM45.36000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	6 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
IGCM10F60GAXKMA1 IGBT 600V 24MDIP Infineon Technologies	117 In Stock	1 : RM48.02000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	10 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
IKCM15F60GAXKMA1 IFPS MODULES Infineon Technologies	280 In Stock	1 : RM54.09000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	15 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
IKCM20L60GDXKMA1 IFPS MODULE 600V 20A 24PWRDIP Infineon Technologies	315 In Stock	1 : RM58.08000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	20 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
IKCM30F60GAXKMA1 IFPS MODULE 600V 30A 24PWRDIP Infineon Technologies	2,243 In Stock	1 : RM60.96000 Tube	CIPOS™	Tube	Active	IGBT	3 Phase	30 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
IGCM20F60GAXKMA1 IGBT 600V 20A 24PWRDIP MOD Infineon Technologies	207 In Stock	Active	CIPOS™	Tube	Active	IGBT	3 Phase	20 A	600 V	2000Vrms	-	-	Through Hole	24-PowerDIP Module (1.028", 26.10mm)
FNB41060B2 IGBT 3PH 600V 10A MODULE onsemi	149 In Stock	1 : RM66.67000 Tube	Motion SPM® 45	Tube	Not For New Designs	IGBT	3 Phase	10 A	600 V	2000Vrms	-	-	Through Hole	26-PowerDIP Module (1.024", 26.00mm)
FNB41560 MODULE SPM 600V 15A 26PWRDIP onsemi	135 In Stock	1 : RM68.27000 Tube	Motion SPM® 45	Tube	Not For New Designs	IGBT	3 Phase	15 A	600 V	2000Vrms	-	-	Through Hole	26-PowerDIP Module (1.024", 26.00mm)
FNB41060 MOD SPM 600V 10A SPM26-AA onsemi	105 In Stock	1 : RM68.27000 Tube	Motion SPM® 45	Tube	Active	IGBT	3 Phase	10 A	600 V	2000Vrms	-	-	Through Hole	26-PowerDIP Module (1.024", 26.00mm)

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Power driver modules provide the physical containment for power components, usually IGBTs and MOSFETs in a half bridge or one-, two- or three-phase configurations. Power semiconductors or dies are soldered or sintered on a substrate that carries the power semiconductors and provides electrical and thermal contact and electrical insulation where needed. Power modules provide a higher power density and are in many cases more reliable and easier to cool.